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Showerhead Thermal Atomic Layer Deposition
Crossflow Thermal Atomic Layer Deposition
Plasma Enhanced Atomic Layer Deposition
Plasma Enhanced Chemical Vapor Deposition
Reduced Pressure Silicon Epitaxy
NMOS: Si Channel / Strained SiGe Source-Drain; PMOS: Strained SiGe Channel / SiGe Source-Drain; Channel Materials:Pure Si (for NMOS);
Strained SiGe (for PMOS); Pure Ge (Emerging Channel)
Atmospheric Pressure Silicon Epitaxy
Silicon Carbide Epitaxy
Thermal ALD
PEALD|Plasma Enhanced Atomic Layer Deposition
EPI | SiGe Epitaxy Systems
PECVD|Plasma Enhanced Chemical Vapor Deposition
SiC EPI|Silicon Carbide Epitaxy
ALE|Selective Etch
Selective Etch
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Release time：2025.01.08
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