Spritz Thermal ALD is based on a showerhead dual-chamber design,   combined with the high-throughput Celeritas-8  transfer module and the intelligent Exsequisoftware platform,  which greatly enhances the through-put and stability of the  system. Additionally, Spritz is equipped with advanced  intake, mixing, and gas distribution systems that greatly improve  film uniformity and reduce particle generation. The multi-zone  temperature control system effectively reduces particle  generation in the showerhead area, while in-situ cleaning  extends chamber life and significantly lowers customer  operating costs.

Spritz can be widely used for HKMG metal  layer deposition such as pMetal/nMetal/Metal contacts, NAND  WL, DRAM bWL and film deposition for storage node area.

Fluxus is featuring an innovative crossflow dual-chamber design combined with the high-throughput Celeritas-8 transfer module and the intelligent Exsequi software platform, which greatly enhances the through-put and stability of the system. Additionally, Fluxus is equipped with various advanced key components that significantly improve chamber stability, film uniformity, and chamber life time. For instance, the most advanced solid source delivery system ensures the stability of the precursor delivery, and the Wafer Indexing system effectively aids in improving film uniformity.

Fluxus can be widely used for film deposition in Logic FEOL High-k/Dipole and DRAM Peri High-k/Dipole applications.

Auratus Plasma-Enhanced Atomic Layer Deposition (PEALD) System, mounted on the PSR platform Celeritas-8, processes up to 8 wafers simultaneously, meeting the demands for high productivity and high film quality. Auratus PEALD system, with extremely small ALD chambers, optimized flow field, thermal field, and RF circuit design, offers advantages such as high stability, high chamber to chamber matching performance, high utilization, and low precursor consumption. Providing an efficient and stable solution for customers in the integrated circuit and advanced packaging industries.

Auroalis Plasma-Enhanced Chemical Vapor Deposition(PECVD) System, mounted on the PSR platform Celeritas-8, processes up to 8 wafers simultaneously, meeting the demands

for high productivity and high film quality. Auroalis series of products ensures high process stability through optimized flow field, thermal field, and RF circuit designs; ceramic heater provides a solution to the wafer warping issue; and optimization of chamber component materials and surface treatment processes effectively lowers particles. Auroalis provides solutions for a wide range of customers from planar architecture to high aspect ratio 3D structures, for multiple device types and process nodes.

The silicon epitaxy process refers to the growth of a layer of single crystal material with the same lattice arrangement as the substrate on a single crystal substrate, Perfectus-R is mainly used for heteroepitaxial layers（SiGe/Si or SiP/Si）growth. It’s aimed at improving the mobility of electrons or holes in the CMOS process of logic chips, thereby improving device performance.