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Torridus

Silicon Carbide Epitaxy

Torridus SiC EPI system, equipped with the innovative hardware and intelligent control system independently developed by PSR: Exsequi, which is the core process of manufacturing the third generation semiconductor silicon carbide chips ‒ homoepitaxy of silicon carbide. The system is compatible with 6-inch and 8-inch wafers and is a silicon carbide epitaxial growth equipment with excellent process performance, low maintenance frequency and high production capacity

Market Applications

  • Energy Storage Systems (ESS)
  • EV Charging Infrastructure
  • Photovoltaics (PV)
  • Rail Transit Electrification
  • New Energy Vehicles (NEV)

Key Advantages

Increase production capacity by 1.2 to 1.4 times, with a lower CoO

Optimized chamber des ign to meet performance requirements such as the wafer thickness and doping uniformity, and the adjustability from the middle region to the edge region

Top-level machine stability, reliability and safety: Multi-level hardware and software safety interlock

Excellent software operating system and intelligent data analysis platform, the world's top process/hardware customer service team;

The 8-inch equipment is compatible with 6-inch, providing a complete process and design solution