The silicon epitaxy process refers to the growth of a layer of single crystal material with the same lattice arrangement as the substrate on a single crystal substrate, Perfectus-A is mainly used for the growth of homogeneous epitaxial layers (Si/Si), used in the manufacturing of semiconductor discrete devices and integrated circuits. Epitaxy growth can improve the integrity of the CMOS gate oxide layer, channel leakage, and the reliability of integrated circuits by growing high-quality epitaxial layers.
