Reduced Pressure Silicon Epitaxy
The silicon epitaxy process refers to the growth of a layer of single crystal material with the same lattice arrangement as the substrate on a single crystal substrate,Perfectus-R is mainly used for heteroepitaxial layers(SiGe/Si or SiP/Si)growth.It's aimed at improving the mobility of electrons or holes in the CMOS process of logic chips,thereby improving device performance.
NMOS/PMOS/Channel si/Channel siGe/pure Ge required for high-end chips
Increased production capacity to 1.5 times,lower CoO;
Optimized reaction chamber design aided by CFD simulation to achieve performance requirements such as Wiw film thickness,doping uniformity and center-edge tunability;
Suitable for Channel/NMOS/PMOS applications,excellent electrical properties and defect control;
Top production stability,reliability and safety,multi-level hardware and software safety interlock testing;
Excellent software operating system and intelligent data analysis platform,the world's top technology/hardware customer support team.
